Design Optimization of RF Power MOSFET's Using Large Signal Analysis Device Simulation of matching Networks

摘要

This paper discusses the modeling and simulation of power MOSFET's using large signal device simulation. In order to provide an accurate representation of an LDMOS MOSFET, a model for the intrinsic device and the extrinsic parasitic components is developed. The RF performance of the model is then verified with experimental data. With the proven model, the effect of parasitic components is analyzed and the matching networks are optimized for the desired response.