Processing of PbTiO_3 and Pb(Zr_xTi_1-x)O_3 thin films by novel single-solid-source metalorganic chemical vapor deposition

摘要

Ferroelectric PbTiO_3 (PT) and Pb(Zr_xTi_1-x)O_3 (PZT) thin films have been deposited on (100) MgO and (111) Pt/SiO_2/(100)Si substrates by using a novel single-solid-source metalorganic chemical vapor deposition (MOCVD) technique. The new technique uses a powder delivery system to deliver the mixed precursor powders directly into a hot vaporizer from room temperature, therefore, avoiding any problems assoicated with polymerization or decomposition of the precursors before evaporation. The technique simplifies MOCVD processing significantly and can improve process reliability and reproducibility. The deposited PT and PZT films have a perovskite structure and are highly oriented with respect to the substrate. With improvement of process control, systematic studies of film evolution under various growth conditions have bene carried out. Effects of substrate, substrate temperature, system system vacuum, and precursor ratios in the mixture on film microstructure and properties will be presented in this paper.