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Semiconductor Material Requirements for Orthogonal Strip Detectors

机译:正交带探测器的半导体材料要求

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We discuss the physical and electrical properties of semiconducting crystals necessary for use in orthogonal strip detectors. We also compute what constraints the properties of existing CdZnTe crystals place on the design of orthogonal strip detectors. First we consider the constraints imposed by uniform material that has limited charge carrier transport properties and resistivity. Next, we consider what effects spatially varying electrical properties (non-uniformities) have on the performance of detectors. Finally, we discuss the properties of CZT crystals available today that we have measured in our laboratory, and what ramifications these measured properties have on the design and construction of orthogonal strip detectors.
机译:我们讨论在正交带探测器中使用所需的半导体晶体的物理和电性能。我们还计算了在正交带探测器设计上的现有CDznte晶体的属性的约束。首先,我们考虑均匀材料施加的约束,其具有有限的电荷载流性和电阻率。接下来,我们考虑空间上变化的电气性能(非均匀性)对探测器的性能有何影响。最后,我们讨论了今天可用的CZT晶体的性质,我们在实验室中测量,这些测量性质对正交性带探测器的设计和构建有什么影响。

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