Ellipsometric studies of the effect of a metal island structure on the optic properties of a semiconductor surface

摘要

The ellipsometry method is used to study the optic properties of the real gold-doped gallium arsenide surface. The ellipsometric angles $Psi and $Delta were measured with the LEF-3M laser ellipsometer in the range of angles (curly phi) $EQ 45 degrees-85 degrees to an accuracy 0.5. The optical constants and the interfacial layer thickness were calculated using the ELLA application package. The structure model proposed for the metal-doped gallium arsenide surface takes into account the specific deposition of the dopant and the dopant distribution over the surface. The ellipsometry data are compared with those obtained by electron microscopy. The ellipsometry method is shown to be useful in the estimation of the degree of coating and the doped surface morphology.