Conformal copper deposition in deep trenches

摘要

For the use as metallization in CMOS device fabrication, we established a single wafer CVD copper deposition process with CupraSelect(R) (Schumacher) as precursor. Deposition was performed with a Delta 201 from Electrotech. We used a direct liquid injection system with an HPLC pump. The dependance of film properties upon pressure is described. In a certain pressure range, the CVD process is suitable for conformal filling of 18 /spl mu/m deep via holes with an aspect ratio of 10. The measured film resistivity is 1.95 u/spl Omega/cm as deposited and is reduced to 1.86 /spl mu//spl Omega/m after an annealing step.