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Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

机译:GaN / AlGaN和Ingan / GaN多量子阱Microotisk腔中的光学性质和谐振模式

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Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 angstroms/50 angstroms GaN/Al$-x$/Ga$-1$MIN@x$/N (x approximately 0.07) and 45 angstroms/45 angstroms In$-x$/Ga$-1$MIN@x$/N/GaN (x approximately 0.15) multiple quantum well structures. Microdisks, approximately 9 $mu@m in diameter and regularly spaced every 50 $mu@m, were formed by ion beam etch process. Individual disk was pumped from 10 K to 300 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. From cw PL emission spectra, optical modes corresponding to (1) the radial mode type with a spacing of 49 - 51 meV (both TE and TM) and (2) the Whispering gallery mode with a spacing of 15 - 16 meV were observed in the GaN-based microdisk cavities. The spacings of these modes are consistent with theoretical calculation. The implications of our results to III-Nitride microdisk lasers are discussed.
机译:在光学泵浦微仪腔中观察到的光学谐振模式,由50埃/ 50埃甘/ al $-$ / Ga $ -1 $ min @ $ / n(x约0.07)和45埃/ 45埃$ 45 -x $ / ga $ -1 $ min @ x $ / n / gan(x约0.15)多量子阱结构。 Microdisks,直径约为9 $ MU @ M,通过离子束蚀刻工艺形成每50 $ 50 $ MU @ M定期间隔开。将单个盘从10 k泵送到300 k,带有290nm激光脉冲,聚焦到光斑尺寸远小于盘直径。已经通过PICOSECOND时间分辨的光致发光(PL)光谱学研究了这些微小管的光学性质。从CW PL发射光谱,对应于(1)的光学模式,径向模式类型具有49-51meV(TE和TM)的间距和(2)耳语廊道模式,在潜在的展示廊道模式下被观察到15-16mev的耳语基于GaN的微仪腔。这些模式的间距与理论计算一致。讨论了我们对III-氮化物微磁盘激光器的影响。

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