MULTI-SCALE TRANSIENT THERMAL ANALYSIS OF MICROELECTRONICS N^Banafsheh BarabadiG.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, 801 Ferst Dr., Atlanta GA 30306, USA

摘要

Thermal transport in microelectronic devices spans length scales from tens of nanometers to hundreds of millimeters. One of the major challenges in maintaining quality and reliability in today's microelectronic devices comes from the ever increasing level of integration in the device fabrication as well as the high level of current densities that are carried through the microchip during operation. Consequently, significant opportunities for energy efficiency exist at various levels of the length scale hierarchy by optimization of thermal management resources.