Photodetector with controlled photosensitivity in 1.1-1.6 /spl mu/m spectral range

摘要

The results on the elaboration of photodetectors based on InGaAsP-InGaAs-InP heterostructures with controlled photosensitivity in 1.1-1.6 /spl mu/m spectral range are presented. The appearance of photosensitivity dependence on bias voltages and the causes of the threshold character of this dependence for such structures are discussed.