Accurate power semiconductor device models are needed to predict large overshoot voltages and currents, switching power losses, conducted EMI etc. in the design of high performance, reliable power converters. A new systematic modeling technique, the lumped-charge modeling technique, is used to construct high power device models for power electronic circuit simulation. The lumped-charge models are composed of simple and continuous device equations and are valid over a wide range of operation. They represent a new generation of accurate power semiconductor device models.
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