Optical and infrared spectra of thermally-annealed Pb-implanted SiO2 glasses

摘要

Infrared reflectance between 4000 and 100 cm$+$MIN@1$/ and optical spectra between 1.8 and 6.2 eV of high purity silica implanted with nominal doses of 1, 3, and 6 $MUL 10$+16$/ Pb ions/cm$+2$/ were recorded before and after annealing at 400, 600, and 800$DGR C for 1 hour. Curve resolution analysis of the Si-O stretching region resulted in six peaks which were characterized by their lineshape parameters. The oscillator strength of the ion induced defect peak at 1035 cm$+$MIN@1$/ was found to depend on ion dose. The defect band at 1035 cm$+$MIN@1$/ decreased to an intensity comparable to that of the unimplanted glass after thermal annealing for 1 hour at 800$DGR C. Far infrared spectra indicated the formation of lead silicate particles after annealing.