Extended cavity lasers formed by fluorine induced quantum well disordering

摘要

An oxide stripe extended cavity laser has been fabricated by neutral impurity induced disordering, using F ion implantation in the InGaAsP/InGaAs/InP system, followed by an anneal at 700 degrees C for 30 seconds. Losses of 12.5 dB cm/sup -1/ have been measured in the laser by studying the luminescence from the active and passive facets below threshold. This relatively small loss is in agreement with the small change in threshold current between an oxide stripe laser with and without the integrated passive cavity.