An ultra-high-speed asynchronous transfer mode (ATM) switching module having a highway throughput of 9.6 Gb/s using a HEMT process switch IC and a ceramic multichip substrate was developed. The switch IC operates at 1.2 Gb/s. This module provides a 4*4 switch, corresponding to a switching capacity of 256 channels at 156 Mb/s. High-speed switching is essential for constructing a large switching system with small volume and low power consumption. A simulation of both cell buffer operation and line characteristic is presented. The experimental results are shown.
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