Novel processing techniques for optoelectronic devices and their integration (Invited Paper)

摘要

Novel processing techniques currently being developed for the fabrication of optoelectronic devices are described: including fabrication of low threshold lasers using in-situ monitored reactive ion etching, the use of impurity-induced-disordering to form high-performance lasers with self-aligned Si/Zn diffused junctions, and the fabrication of in-plane surface-emitting lasers with 45 inch etched facets. Application to the monolithic integration of optoelectronic devices is discussed.