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High efficiency and high linearity microwave power amplifiers based on ultra-high f/sub max/ selective buried sub-collector (SBSC) HBTs

机译:基于超高F / SUB MAX /选择性掩埋子收集器(SBSC)HBT的高效率和高线性微波功率放大器

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This paper presents several microwave power amplifier designs that promise high power and broad bandwidth, while meeting the efficiency and linearity requirements of advanced radar and communication systems. Power amplifiers are designed based on an ultra-high f/sub max/ (450 GHz) selective buried sub-collector (SBSC) HBT technology. SBSC HBTs are fabricated on pre-patterned sub-collector mesas. The active device region is carefully designed so that the overlap between the extrinsic base and the sub-collector is totally eliminated for minimizing the base collector capacitance and maximizing the device f/sub max/. Simulations on SBSC HBT microwave amplifiers show that 10 W output power may be achievable with PAE50% and OIP3=40 dBm at 7-11 GHz (X-band) and 4 W output power with PAE=30% and OIP3=32 dBm at 28-32 GHz (Ka-band). These results show the great potential of using SBSC HBTs for broadband and high power microwave amplifiers with high efficiency and linearity.
机译:本文介绍了几种微波功率放大器设计,承诺高功率和广泛的带宽,同时满足高级雷达和通信系统的效率和线性需求。功率放大器是基于超高F / SUB MAX /(<450 GHz)选择性掩埋子收集器(SBSC)HBT技术的设计。 SBSC HBT在预先图案的子收集器MESAS上制造。精心设计的主动装置区域,使得外部基座和子收集器之间的重叠完全消除,以便最小化基本集电极电容并最大化装置F / SUM Max /。 SBSC HBT微波放大器的模拟表明,PAE <10W输出功率可实现7-11 GHz(X波段)和<4 W输出功率,PAE = 30%和OIP3 = 40V = 40 dBm。 32 dBm处为28-32 GHz(KA波段)。这些结果表明,对于具有高效率和线性的宽带和高功率微波放大器使用SBSC HBT的潜力很大。

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