Study of hot-carrier stress effects on the DC characteristics of SOI NMOST's operating at 4.2 K

摘要

The influence of hot-carrier stress on SOI (silicon-on-insulator) transistors, fabricated on different substrate types (Kopin, laser-recrystallized, and SIMOX) and in different technologies, is reported. Different behavior is observed for samples stressed under rather symmetrical bias conditions (e.g., the drain voltage V/sub ds/ approximately=the gate voltage V/sub gs/), called the weak stress condition, compared with devices operated under strong stress (V/sub ds/V/sub gs/).