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Wavelength Tunable VCSELs Based on Voltage-dependent Birefringence of Liquid Crystal

机译:基于液晶电压依赖性双折射的波长可调Vcsels

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For developing the tunable performance and stability, we present a widely tunable 850nm-range VCSEL structure based on the voltage-dependent birefringence of liquid crystal. An intracavity liquid crystal layer is imbedded between the top DBR (Distributed Bragg Reflector) and the Half VCSEL as an electro-optic index modulator. An Al_(0.98)Ga_(0.02)As oxidization layer was grown above the active region for current and optical confinement. By the calculation, we found tuning efficiency increased after thickening the liquid crystal layer. However, the optical loss in resonance cavity also increased simultaneously. For compromise, we got that 1837nm is the most suitable thickness. And the tuning efficiency is obviously larger than the electrostatic method. Then, we calculated the electric field intensity distribution, the gain characteristics of GaAs/Al_(0.3)Ga_(0.7)As quantum wells and the threshold features when thickness of liquid crystal layer is 1837nm. By analyzing these results, tuning efficiency of 5.4nm/V and 15nm tuning range are obtained at last. Our study could provide insight into tunable VCSELs design and optimization.
机译:为了开发可调谐性能和稳定性,我们基于液晶的电压依赖性双折射呈现了广泛的可调谐850nm范围的VCSel结构。在顶部DBR(分布式布拉格反射器)和半VCSEL之间被嵌入腔内液晶层作为电光指数调制器。作为氧化层的Al_(0.98)Ga_(0.02)在有源区域上方生长,用于电流和光学限制。通过计算,在增厚液晶层后,我们发现调谐效率增加。然而,谐振腔中的光学损耗也同时增加。为了妥协,我们得到了1837nm是最合适的厚度。调谐效率明显大于静电方法。然后,我们计算了电场强度分布,GaAs / Al_(0.3)Ga_(0.7)的增益特性为量子阱,当液晶层厚度为1837nm时的阈值特征。通过分析这些结果,最后获得了5.4nm / v和15nm调谐范围的调谐效率。我们的研究可以为可调型VCSELS设计和优化提供深入了解。

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