Ge Epitaxial Layers on Si for Group-IV Integrated Photonics

机译：GE对IV集团集成光子谱的GE外延层

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摘要

Photonic device technologies utilizing Ge epitaxial layers on Si are presented. Near-infrared pin photodetectors are successfully integrated with Si optical waveguides. Band-engineered Ge layers are also presented toward higher-performance photonic devices.

机译：提出了利用GE外延层对SI的光子器件技术。近红外销光电探测器与Si光波导成功集成。带工程化的GE层也朝向更高性能的光子器件呈现。

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《International Conference on Photonics in Switching and Computing》|2019年|591 p. :|共3页
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Yasuhiko Ishikawa;
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中图分类通信;
关键词
Si/Ge; Photodetectors; Photonic integration; Novel photonic materials for active devices;

机译：Si / Ge;光电探测器;光子集成;用于有源器件的新型光子材料;

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2. Clinical study of apatinib in the treatment of stage IV osteogenic sarcoma after failure of chemotherapy [J] . Zhichao Liao, Ting Li, Chao Zhang, 癌症生物学与医学：英文版 . 2020,第002期
3. Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits [J] . Cho Seongjae, Park Joonsuk, Kim Hyungjin, Photonics and Nanostructures: Fundamentals and Applications . 2014,第1期

机译：掺锗对IV组光子集成电路中硅锗无源器件光学性能的影响
4. High-performance waveguide-integrated Ge/Si avalanche photodetector with small contact angle between selectively epitaxial growth Ge and Si layers [J] . Xiao-Qian Du, Bu-Wen Cheng, Chun-Lai Xue, 中国物理：英文版 . 2019,第006期

机译：选择性集成外延生长Ge和Si层之间接触角小的高性能波导集成Ge / Si雪崩光电探测器
5. On the role of secondary extinction in the measurement of the integrated intensity of X-ray diffraction peaks and in the determination of the thickness of damaged epitaxial layers [J] . Kyutt R. N. Physics of the solid state . 2016,第6期

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6. Ge Epitaxial Layers on Si for Group-IV Integrated Photonics [C] . Yasuhiko Ishikawa International Conference on Photonics in Switching and Computing;OptoElectronics and Communications Conference . 2019

机译：用于IV组集成光子的Si上的Ge外延层
7. Heterogeneous Integration and Multilayer Platform for Photonic Integrated Circuits [D] . Shang, Kuanping. 2017

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8. Enhanced Telecom Emission from Single Group-IV QuantumDots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities [O] . Magdalena Schatzl, Florian Hackl, Martin Glaser, -1

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9. Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits [O] . Cho Seongjae, Park Joonsuk, Kim Hyungjin, 2014

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10. Integrated Photonics Research Technical Digest Series. Volume 10. ConferenceEdition: Summaries of Papers Presented at the Integrated Photonics Research Topical Meeting Held in New Orleans, Louisiana on 13-16 April 1992 [R] . Quinn 1992

机译：集成光子学研究技术文摘系列。第10卷。会议版：1992年4月13日至16日在路易斯安那州新奥尔良举行的综合光子学研究专题会议上发表的论文摘要

Ge Epitaxial Layers on Si for Group-IV Integrated Photonics

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