Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Two Electrode Terminals Biased with Constant Offset Voltage

摘要

Double negative differential resistance (NDR) behavior was observed in the concentric circle electrode MISIM tunnel diodes by the simultaneous biasing method. The two electrodes of MISIM were biased simultaneously with a constant offset voltage with substrate grounded. The double NDR characteristic was shown in the current of the inner circle electrode. Since the current of the Al/SiO_2/Si(p) structure has the property of high sensitivity to the supply of the nearby minority carriers, the current in the inner circle can be modulated by the amount of the supplied minority carriers. The inversion charge and the electron tunneling in the outer ring affect the amount of minority carriers and result in the increase and decrease of the inner circle MIS current. The voltage and current level of double NDR can be tuned easily by varying the biasing condition rather than changing its fabrication process. This provides possible flexibility on the design of NDR applications.