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Electrodeposition of Fluorine Doped Cadmium Telluride for Application in Photovoltaic Device Fabrication

机译:氟掺杂碲化镉电沉积在光伏器件制造中的应用

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Electrodeposition (ED) technique has been used to deposit thin film Cadmium Telluride (CdTe) on glass/fluorine-doped tin oxide (Glass/FTO) substrates using a two-electrode system from acidic, aqueous medium containing Cd(NO_3)_2 4H_2O, TeO_2 and CdF_2 as a dopant. Photoelectrochemical (PEC) cell measurement, X-ray diffraction (XRD), Optical absorption, and Atomic force microscopy (AFM) were carried out to study the electrical, structural, optical, compositional and morphological properties of the as-grown, heat treated and CdCl_2 treated ED-CdTe layers respectively. The characterisation data obtained signified 1370 mV as the best growth potential and CdCl_2 treatment at 400°C for 15 minutes as the best post growth treatment to achieve optimal result.
机译:使用来自酸性的水性介质的双电极系统,使用来自酸性的水性介质(NO_3)_2 4H_2O,涂在玻璃/氟掺杂锡氧化物(玻璃/ FTO)基材上沉积在玻璃/氟掺杂的氧化锡(玻璃/ FTO)基板上的薄膜碲化镉(CdTe)。(NO_3)_2 4H_2O, TEO_2和CDF_2作为掺杂剂。进行光电化学(PEC)电池测量,进行X射线衍射(XRD),光学吸收和原子力显微镜(AFM),以研究生长,热处理的电气,结构,光学,组成和形态学性能和CDCL_2分别处理的ED-CDTE层。作为最佳的增长潜力和CDCl_2处理,获得了1370mV的表征数据,使15分钟作为最佳的生长治疗,以实现最佳结果。

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