Experiment and Model for Distance-Dependent Mismatch

摘要

Model of across-chip variation that is accurate for both the micrometer and the millimeter scale enables chip designers to improve power, performance, and yield. Through theory and experimental data, we first show that distance-dependent mismatch in semiconductor devices exhibits a relation that deviates from Pelgrom's quadratic-in- distance relation, especially for large distance. Next, for the first time, we present a compact and complete solution of modeling any arbitrarily given 1D or 2D distance-dependent mismatch and spatial correlations. The resulting spatial correlation is both translational invariant and continuous. The correlation range of the given spatial correlation can be much smaller than, be about, or be much larger than chip size. When netlisting each device for simulations, we only need that device's location.