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High-precision picosecond laser structuring on LTCC for silicon chip assembly with high electrical contact density

机译:具有高电接触密度的LTCC的高精度PICOSECOND激光结构,具有高电接触密度

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The paper presents a novel manufacturing process which offers a high structure resolution and a high density of electrical contacts on Low Temperature Co-Fried Ceramic (LTCC) for silicon chip assembly. To provide of the small pitch of contacts screen printed gold thick films are laser structured with a picosecond laser ablation machine. Laser structured thick film contact pads have dimensions of 59 μm by 59 μm and laser drilled 50 μm vias are used to provide vertical electrical contacts to laser structured thick film lines on the inner layers. The internal structures are laser structured to provide a high line density. To demonstrate the usability of the laser structured contact pads for the chip assembly a silicon test chip is manufactured in thin film technology having gold pads with dimension of 60 microns by 60 microns. Gold stud bumps were placed on the chip pads using a thermosonic ball-wedge bonder and a 25 μm gold wire. The test chip is mounted on the laser structured surface of the LTCC by means of thermo-compression flip chip bonding. A daisy chain structure was realized on the surface of the test chip and on the LTCC to measure the electrical interconnections between the test chip and the LTCC package. The geometrical shape is measured by laser scanning microscopy (LSM). To ensure the functionality and to exclude internal failures (e.g. shorts) the samples are scanned with X-ray inspection.
机译:本文提出了一种新颖的制造过程,其提供高结构分辨率和用于硅芯片组件的低温配油(LTCC)上的高密度电触点。为了提供触点的小间距筛网印刷金厚膜是用Pic秒激光消融机械的激光结构。激光结构厚膜接触垫具有59μm的尺寸,乘59μm且激光钻出的50μm通孔用于在内层上提供垂直电触点,以向激光结构厚膜线提供垂直电触点。内部结构是激光结构,以提供高线密度。为了证明芯片组件的激光结构的接触焊盘的可用性,硅测试芯片是在薄膜技术中制造的,该薄膜技术具有60微米的尺寸为60微米。使用热循环球楔粘合剂和25μm金线将金螺柱凸块放置在芯片垫上。通过热压缩倒装芯片键合,测试芯片安装在LTCC的激光结构表面上。在测试芯片表面和LTCC上实现了一种菊花链结构,以测量测试芯片和LTCC封装之间的电互连。通过激光扫描显微镜(LSM)测量几何形状。为了确保功能并排除内部故障(例如,短路)使用X射线检测扫描样本。

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