Analysis of the implications of stacked devices in nano-scale technologies for analog applications

摘要

In this work, a methodology to assess the implications on the performance of analog circuits due to the use of stacked devices in current nano-scale technologies is presented. To evaluate the usage of stacked devices, the characteristic curves of transistors implemented with a different amount of transistors in stack are obtained and compared to those of a single device. The effects of using stacked devices are further studied with the implementation of a current mirror and the implementation of two different layout topologies, discussing their tradeoffs, advantages and drawbacks. Our methodology facilitates designers to develop a good understanding of the characteristics and limitations of a particular physical design before silicon is back for laboratory testing.