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Impact of Synthesis Temperature on Structure of Carbon Nanotubes and Morphological and Electrical Characterization of Their Polymeric Nanocomposites

机译:合成温度对其聚合物纳米复合材料碳纳米管结构的影响及其聚合物纳米复合材料的形态学和电学特性

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Carbon nanotubes (CNTs) were synthesized by chemical vapor deposition technique at a broad range of temperatures, i.e. 550°C to 950°C (at 100°C intervals). CNTs were synthesized by flowing source and carrier gases (ethane, argon, and hydrogen) over Fe catalyst in a quartz tubular reactor. CNTs were melt mixed with a polyvinylidene fluoride (PVDF) matrix in a miniature mixer. The resulting nanocomposites were then compression molded, and electrically and morphologically characterized. Moreover, a wide range of characterization techniques were employed to obtain detailed information about the physical and morphological characteristics of CNTs. It was surprisingly observed that, despite the ascending trend of powder conductivity with the synthesis temperature, the nanocomposites made with (CNT)_(650)o_C had significantly lower percolation threshold (around 0.4wt.%) and higher electromagnetic interference shielding (20.3dB over the X-band for 1.1mm thickness) compared to the other temperatures. The characterization of nanofillers showed that the synthesis yield and quality of (CNT)_(650°C) were highly superior to the other types of CNTs. At 850°C and 950°C, most of the synthesized carbonaceous materials formed graphitic structures around the sintered catalyst particles. It was also observed that the dispersion state of (CNT)_(650°C) within the PVDF matrix was much better than that of CNTs synthesized at the other temperatures. Superior electrical properties of (CNT)_(650°C) nanocomposites can be attributed to a combination of high synthesis yield, low diameter and decent quality of CNTs coupled with good state of dispersion within the PVDF matrix.
机译:通过化学气相沉积技术在宽范围的温度下合成碳纳米管(CNT),即550℃至950℃(以100°C间隔)。通过在石英管式反应器中通过Fe催化剂流动源和载气(乙烷,氩气和氢)来合成CNT。将CNT与微型混合器中的聚偏二氟乙烯(PVDF)基质混合混合。然后将得到的纳米复合材料进行压缩成型,并在形态学上表征。此外,采用广泛的表征技术来获得关于CNT的物理和形态特征的详细信息。令人惊讶地观察到,尽管具有合成温度的粉末导电性的上升趋势,但用(CNT)_(650)O_c制备的纳米复合材料显着降低了渗透阈值(约0.4wt%)和更高的电磁干扰屏蔽(20.3dB与其他温度相比,在X波段厚度为1.1毫米。纳米填料的表征表明,(CNT)_(650℃)的合成产率和质量高度优于其他类型的CNT。在850°C和950℃下,大多数合成的碳质材料在烧结催化剂颗粒周围形成石墨结构。还观察到PVDF基质内(CNT)_(650℃)的分散状态远优于在另一温度合成的CNT的分散状态。 (CNT)_(650℃)纳米复合材料的优异电性能可归因于高合成产率,低直径和CNT的不良质量的组合,CNT与PVDF基质内的良好分散状态耦合。

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