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Ultrananocrystalline Diamond Films as a High QE Photocathode

机译:超晶金刚石薄膜作为高QE光电阴极

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Quantum efficiency (QE) measurements of 150 nm nitrogen-incorporated ultrananocrystalline diamond films terminated with hydrogen, (N)UNCD:H, were carried out in the range between 250 and 440 nm. (N)UNCD:H demonstrated a QE as high as -0.1 % at 254 nm. Additionally, (N)UNCD:H was sensitive in visible light (405 to 440 nm) with a QE of ~5×10~(-6) % at 405 nm, which is comparable with QE range of poly crystalline copper photocathodes operated at 250-270 nm (with no MV/m gradients on the surface). Note, the (N)UNCD:H samples were transported ex situ in air. Achieved high QEs in near UV and visible ranges are thanks to introduction of electron states in the band gap close to the conduction band minimum via nitrogen incorporation and negative electron affinity introduced by hydrogen states on the (N)UNCD surface.
机译:用氢气(n)UNC值:h终止的150nm氮气掺入的超晶金刚石薄膜的量子效率(qe)测量在250至440nm之间进行。 (n)UNC规定:H在254nm处展示高达-0.1%的QE。另外,(n)UNC值:H在可见光(405至440nm)中敏感,在405nm处的qe为qe〜5×10〜(-6)%,其与在操作时操作的聚结晶铜光电偶的QE范围相当250-270 nm(表面上没有MV / M梯度)。注意,(n)UNC值:H样品在空气中运输前原位。近紫外线和可见范围在接近UV和可见范围内实现的高QES在靠近导通带的带间隙中通过氮气掺入和负电子亲和力在(n)UNC;

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