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A HAXPES measurement system up to 15 keV developed at BL46XU of SPring-8

机译:HAXPES测量系统高达15 kev的Spring-8的BL46XU开发

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In order to achieve much larger probing depth than the conventional HAXPES system of BL46XU, a HAXPES measurement system equipped with a cylindrical sector analyzer, Focus HV-CSA 300/15 has been developed, by which photoelectrons with the kinetic energy up to 15 keV can be analyzed. The Si 1s peak which comes from the buried Si wafer underneath the 60 nm SiO_2 thin films can be clearly identified in the spectra excited by the photon energy of 14 keV, indicating the much larger probing depth than the conventional HAXPES measurement with 8 keV X-ray. The total energy resolution estimated from the Au Fermi edge spectra was ~0.5 eV, which is sufficient for the chemical state analysis of materials.
机译:为了实现大于BL46XU的传统HAXPES系统的更大探测深度,已经开发了一种配备有圆柱形扇区分析仪的HAXPES测量系统,专注于HV-CSA 300/15,通过该光电电能高达15 kev的光电可以分析。来自60nm SiO_2薄膜下方的掩埋Si晶片的Si 1s峰可以清楚地在由14keV的光子能量激发的光谱中清楚地识别,表明与8keV x-的传统哈克斯测量的探测深度大得多射线。由Au Fermi边缘光谱估计的总能量分辨率为0.5eV,这足以用于材料的化学状态分析。

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