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Comparison of SiPM and SDD based readouts of 1″ LaBr3:Ce scintillator for nuclear physics applications

机译:基于SIPM和SDD读数的比较1“LABR3:CE核物理应用CE闪烁体

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Silicon Drift Detectors (SDDs) and Silicon PhotoMultipliers (SiPMs) are two silicon based photo-detector technologies for scintillator readout with applications in medical imaging, nuclear physics, space research and others. These devices provide compact scintillator readout solutions for spectroscopy, imaging and timing measurements. Goal of this work, is to make a comparison between these two photo-detector technologies, in particular for gamma-ray spectroscopy measurements. SDDs are characterized by very high quantum efficiency (> 80%) with no multiplication which helps to keep the statistical contribution to the energy resolution close to Poisson limit but, at the same time, makes the system very sensitive to readout electronics noise. SiPM devices on the other hand, have a very high multiplication gain (105-106) which makes the electronics noise contribution almost negligible, with only the dark count rate contribution which can be reduced with moderate cooling. However, they are characterized by lower Photo Detection Efficiency (PDE) ~30-40% and statistical spread of the multiplication gain. In order to compare the spectroscopy performances of the two photo-detectors, we evaluate the energy resolution achievable with them using a large Lanthanum Bromide scintillator. Expected energy resolution with 1" LaBr3:Ce and its sensitivity to various parameters of SDDs and SiPMs are evaluated to analyze the photo-detector performances. With SDD arrays of 2 nA/cm2 leakage current technology, an energy resolution of 3.0% has already been measured at -20 °C with Cs-137 source at a shaper peaking time of 6 μs. In this work, we measure an energy resolution of 4.9% with a SiPM tile readout by an RC filter (300 ns time constant) and a temperature of around 36 °C. These results are then used to validate the theoretical energy resolution estimates and to generalize the comparison of these two readout technologies.
机译:硅漂移探测器(SDDS)和硅光电倍增器(SIPMS)是用于闪烁器读数的两种基于硅的光检测器技术,用于医学成像,核物理,空间研究等应用。这些器件为光谱,成像和定时测量提供了紧凑的闪烁体读数解决方案。这项工作的目标是在这两种光谱探测器技术之间进行比较,特别是对于伽马射线光谱测量。 SDDS的特征在于非常高的量子效率(> 80%),没有乘法,有助于将统计贡献保持对泊松限制的能量分辨率,但同时使系统对读出电子噪声非常敏感。另一方面,SIPM器件具有非常高的乘法增益(105-106),使电子噪声贡献几乎可以忽略不计,只有暗计数率贡献,可以通过中等冷却来降低。然而,它们的特征在于较低的照片检测效率(PDE)〜30-40%和乘法增益的统计扩展。为了比较两张照片探测器的光谱性能,我们使用大镧溴化物闪烁体评估它们可实现的能量分辨率。预期的能量分辨率与1“Labr3:Ce及其对SDDS和SIPMS各种参数的敏感性,分析了光检测器性能。使用2 NA / CM2漏电流技术的SDD阵列,已经存在3.0%的能量分辨率在-20°C下测量在-20°C的峰值峰值时间为6μs。在这项工作中,通过RC滤波器(300ns时间常数)和温度,通过SIPM瓷砖读出4.9%的能量分辨率。大约36°C。然后使用这些结果来验证理论能量分辨率估计,并概括这两个读数技术的比较。

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