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Application of silicon planar structures for the spectrum determination of the proton beams produced by laser-driven particle accelerators. Theoretical approach

机译:硅平面结构在激光驱动颗粒促进剂中产生质子束的光谱测定。理论方法

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Development of the laser-driven particle accelerators to produce the proton beams necessary for the nuclear medicine is a rapidly upcoming field. Laser-accelerated proton spectra feature a broad energy spread in comparison with the case of proton beams produced by conventional accelerators. The thin silicon planar p-i-n structures can be used for the diagnostic of such beams due to their real-time readout, compactness and standard fabrication technologies. In the present work, the application of thin silicon planar p-i-n diodes for the proton spectrum determination of the laser-driven proton beams is theoretically investigated. The method of the proton spectrum reconstruction from the temporal response of the detector irradiated with a single laser-driven proton burst for different distances between proton source of the laser-driven accelerator and detector position has been developed. The temporal response of the detector was modeled for the ultra-thin ultra-fast silicon diode.
机译:激光驱动的颗粒促进剂的开发以产生核医学所需的质子束是一种快速即将到来的领域。与传统加速器产生的质子束的情况相比,激光加速质子光谱具有广泛的能量扩散。由于其实时读数,紧凑性和标准制造技术,薄硅平面P-I-N结构可用于这种梁的诊断。在本作工作中,理论上地研究了用于质子谱确定的薄硅平面P-I-N二极管的应用是对激光驱动的质子束的确定。已经开发了用单个激光驱动质子突发的检测器的时间响应来重建质子谱重建的方法,用于激光驱动的加速器的质子源和检测器位置之间的不同距离。检测器的时间响应为超薄超快速硅二极管建模。

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