Performance of 20×20×5 mm~3 Pixelated Cadmium Zinc Telluride Semiconductor Detectors from Various Anode Fabrication Techniques

摘要

The anode fabrication process for pixelated Cadmium Zinc Telluride detectors is constantly evolving. In September of 2012, Redlen Technologies began manufacturing 50 20 × 20 × 5 mm~3 CdZnTe planar-cathode common-grid 11 × 11 pixelated detectors to determine which fabrication technique minimizes gain deficit. The anode fabrications are divided into 5 groups: standard fabrication with gold contacts on printed circuit board substrate, sputtered platinum contacts, ceramic substrate, and 2 proprietary fabrication techniques dubbed A and B. The performance of these detectors is studied and ranked by comparing gain deficit and standard parameters such as bulk and grid resistivity, energy and imaging resolution, and grid steering in order to recommend adjustments to the standard manufacturing technique and gauge the suitability of these detectors for a multi-detector array system.