Two-channel heterotransistors with quantum dots systems

摘要

Two-channel field-effect heterotransistor characteristics with embedded systems of quantum dots (QDs) are presented. A physical interpretation of processes and analysis of field-velocity dependences in these structures is given. The interaction mechanism of QDs in quantum well with two-dimensional electron gas in high electric fields related to the polar optical phonon influence and charge carriers' emission from QDs is described.