首页> 外文会议>ICPS 2012 >Conductance Fluctuation AndWeak Antilocalization In Epitaxial Bi_2Se_3
【24h】

Conductance Fluctuation AndWeak Antilocalization In Epitaxial Bi_2Se_3

机译:外延Bi_2se_3中的电导波动和屈令反致大平化

获取原文
获取外文期刊封面目录资料

摘要

We report the magnetoresistance fluctuation in a submicrometer-sized Hall-bar made of epitaxial Bi_2Se_3 thin film. We observed the magnetoresistance fluctuation below 18 K and analyzed the fluctuation as universal conductance fluctuation (UCF). According to our results, the temperature dependence is quantitatively explained by the conventional UCF theory and the coherence length derived from UCF is consistent with that derived from weak antilocalization effect.
机译:我们报告了由外延Bi_2se_3薄膜制成的亚微米计大小的霍尔杆中的磁阻波动。我们观察到磁阻波动低于18 k并分析了作为通用电导波动(UCF)的波动。根据我们的结果,通过传统的UCF理论定量解释温度依赖性,并且源自UCF的相干长度与源自弱的防窝化效果一致。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号