A novel parallel-field double-Hall microsensor with self-reduced offset and temperature drift

摘要

An innovative parallel-field double-Hall microsensor comprising a . silicon substrate, four planar contacts providing simultaneously two supply inputs and two differential outputs and a voltage source is characterized. This device functionally integrates two Hall devices sharing the same transducer zone and activated by unique supply current. The magnetosensitivities are equal but opposite in sign consisting of 40 V/AT and the two offsets are low and nearly equal. A self-reduction of the residual offset and its temperature drift is achieved by appropriate conditioning circuit, subtracting the two output voltages. A drastic compensation of the offset and the drift of more than two orders within a wide temperature range (- 40 ≤ T ≤ 80°C) is obtained.