Simulation and Experimental Characterization of a Unified Memory Device with Two Floating-Gates

摘要

The operation of a novel unified memory device using two floatinggates is described through experimental characterization of a fabricated proofof-concept device and confirmed through simulation. The dynamic, nonvolatile, and concurrent modes of the device are described in detail. Simulations show that the device compares favorably to conventional memory devices. Applications enabled by this unified memory device are discussed, highlighting the dramatic impact this device could have on next generation memory architectures.