Investigation of Time Domain Reflectometry (TDR) on Power Mosfet semiconductor device

摘要

This paper provides simple methods to characterize the Time Domain Reflectometry (TDR) signal for a Power Mosfet device. The interfaces under investigation were: die attach, die/wire and wire/lead. The study was also extended to investigate the influence of single, double and triple aluminum wire bonded Power Mosfet on the TDR signal.