首页> 外文会议>Microscopy of Semiconducting Materials Conference >Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy
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Calibration of thickness-dependent k-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy

机译:用于锗X射线线的厚度依赖性K因子的校准,以改善分析透射电子显微镜中SiGe层的能量分散X射线光谱

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We show that the accuracy of energy-dispersive X-ray spectroscopy can be improved by analysing and comparing multiple lines from the same element. For each line, an effective k-factor can be defined that varies as a function of the intensity ratio of multiple lines (e.g. K/L) from the same element. This basically performs an internal self-consistency check in the quantification using differently absorbed X-ray lines, which is in principle equivalent to an absorption correction as a function of specimen thickness but has the practical advantage that the specimen thickness itself does not actually need to be measured.
机译:我们表明,通过分析和比较来自相同元件的多条线可以提高能量分散X射线光谱的精度。对于每行,可以定义有效的K系数,其变化为来自来自相同元素的多条线(例如K / L)的强度比的函数。这基本上使用不同吸收的X射线线来进行内部自我一致性检查,原则上是等于作为样本厚度的函数的吸收校正,但具有实际优点,即样品厚度本身实际上并不需要测量。

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