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Al and Ga Nanoparticles Array Deposited on Silicon by UTAM for Sensors Applications

机译:Al和Ga纳米粒子阵列通过Utam沉积在硅上,用于传感器应用

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Highly order array of Al and Ga nanoparticles have been synthesized by controlling the size pores of Ultra Thin Alumina Membranes masks (UTAMs) produced by anodic alumina, the deposition of array was carried out on the silicon substrate, the roughness and the size distribution of Al and Ga nanoparticles has been investigated, also shown how to organize into order 3Dstructures. The AFM results show that the prepared films have nano dimensions, pores and have large surface area which increasing the probability of gas, chemical and /or photon interaction then they could be employed for sensing device fabrication.
机译:通过控制由阳极氧化铝产生的超薄氧化铝膜掩模(Utams)的尺寸孔来合成了高度顺序阵列,通过阳极氧化铝产生的尺寸,阵列的沉积在硅衬底上进行,粗糙度和Al的粗糙度分布已经调查了GA纳米粒子,还显示了如何组织进入3D结构。 AFM结果表明,制备的薄膜具有纳米尺寸,孔和具有大的表面积,其增加气体,化学和/或光子相互作用的概率,然后它们可以用于传感装置制造。

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