Tunneling Effect in Polythiophene

摘要

Polythiophene has been chemically synthesized using 2,5- dibromothiophene by debromination with magnesium, catalyzed by nickel chloride. The synthesized polymer was undoped using liquid ammonia and then doped again using 5% (wt/volume) aqueous FeCl3 for 2.5, 5 and 10 hour duration. Characterization of undoped as well as doped samples using elemental analysis and FTIR has been carried out. Elemental analysis shows that concentration of Fe~+ atoms increases as the duration of doping increases. The FTIR spectrum reveals the complex formation between FeCl3 and polythiophene. All samples were pressed into pellets of about 1cm in diameter. The pellets were coated with gold (Au) on one side and with aluminum (Al) on other side using vacuum deposition technique. I-V measurements of undoped and FeCl3 doped samples, after coating have been carried out using two probe method. I-V measurements, at room temperature, were carried out by applying d. c. voltage with tve potential to the side of the pellet coated with Au and -ve potential to Al from 0 V to 1 V in step of 0.01 V and then from 1V to 15 V in step of 0.5 V. The measurements were again carried out after interchanging the polarity of the applied voltage. These characteristics are just similar to the characteristics of conventional tunnel diode in forward bias condition and like Schottky diode in reverse bias condition. Various parameters of tunnel diode such as figure of merit, voltage spread, noise figure etc are calculated using the measurements carried out. Noise figure value of undoped polythiophene is very close to ideal value. The performance of all FeCl3 doped sample reduces, however value of the current ratio I_p/I_v (figure of merit) value for 5 hr. FeCl3 doped polythiophene sample matches with that of silicon (Si) tunnel diode.