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Growth of CuInS_2 Microspheres on CuInS_2 Seed Layer Prepared Using Facile Low Cost Chemical Methods

机译:使用易于低成本化学方法制备的Cuins_2微球的生长

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Sparse CuInS_2 (CIS) microspheres were grown on CIS seed layer by a wet-chemical approach in which the nuclei layer was prepared by the chemical spray pyrolysis technique. Both layers have been found to be polycrystalline in nature and possess body centered tetragonal crystal structure. SEM and AFM analyses reveal that the CIS seed layer consists of high dense nanoparticles with the thickness of 0.97μm and the average diameter of the as-grown microspheres is 2.1 μm. The results demonstrated that CIS microspheres exhibited good electrical properties and might have potential applications in photovoltaic technology.
机译:通过湿化学方法在CIS种子层上生长稀疏CuIns_2(顺式)微球,其中通过化学喷雾热解技术制备核层。已经发现这两层都有多晶,并且具有身体居中的四方晶体结构。 SEM和AFM分析表明,顺式种子层由高致密的纳米颗粒组成,厚度为0.97μm,并且生长微球的平均直径为2.1μm。结果表明,CIS微球表现出良好的电性能,并且可能在光伏技术中具有潜在的应用。

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