Room Temperature Ferromagnetism In Undoped And Ni Doped In_2O_3 Thin Films

摘要

Undoped and Ni (5 at.%) doped In_2O_3 thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In_2O_3 thin films were annealed at 450°C. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In_2O_3 thin films exhibited a saturation magnetization of 24.01 emu/cm~3. Ni doped In_2O_3 thin films annealed at 450°C showed a saturation magnetization of 53.81 emu/cm~3.