Growth and Electrical Properties on NLO crystal: 4-N,N-Dimethylamino 4-N-methylstilbazolium Iodide

摘要

4-N,N-Dimethylamino-4-N-methylstilbazolium tosylate single crystals were grown by solution crystal growth method. The cell parameters of grown crystal have been estimated using single crystal-X-ray diffraction analysis. The variation of real (ε) and imaginary (ε) part of dielectric constants and dielectric loss were observed for different frequencies and temperatures. The ac and dc electrical conductivities and activation energy were determined for DMSI crystal using dielectric studies.