A study of deep body implant into the base of Vertical NPN bipolar transistors

摘要

In this paper, we demonstrate the sensitivity of base resistance by different tilt angle of deep body implant into the base of Vertical NPN bipolar transistors. The base resistance in the vertical NPN bipolar transistors shows a strong dependency on the tilt angle of the boron implant from the deep body. We are able to improve the Early voltage (VEA) without degrading the current gain and breakdown voltage of collector and base on an optimal tilt angle of 0 degree.