Improved Drain-Source Current Model for HEMT's with Accurate Gm Fitting in All Regions

摘要

In this paper, we present an improved drain-source current (I-V) model for HEMT's which is simple and easy to extract, suitable for implementation in simulation tools. A single modeling equation is developed, allowing accurate prediction of both static and dynamic I-V characteristics. The model parameters can be extracted to match the measured data closely for a wide bias range without sacrificing accuracy. It is validated through DC as well as power measurements compared to simulations using GaAs HEMT transistors.