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A resistorless current reference source for 65 nm CMOS technology with low sensitivity to process, supply voltage and temperature variations

机译:用于65nm CMOS技术的无电流电流参考源,对过程的敏感性低,电源电压和温度变化

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A reistorless current reference source, e.g. for fast communication interfaces, has been described. Addition of currents with opposite temperature coefficient (PTC and NTC) and body effect have been used to temperature compensation. Cascode structures have been used to improve the power supply rejection ratio. The reference current source has been designed in a GLOBALFOUNDRIES 65 nm technology. The presented circuit achieves 55 ppm/°C temperature coefficient over range of −40 °C to 125 °C. Reference current susceptibility to process parameters variation is ±3 %. The power supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz is lower than −127 dB and −103 dB, respectively.
机译:例如,抵挡电流参考源。 已经描述了快速通信接口。 使用相反的温度系数(PTC和NTC)和身体效果的电流已经用于温度补偿。 共源共栅结构已用于提高电源排斥比。 参考电流源已在全球化的65 nm技术中设计。 呈现的电路实现55 ppm /° c温度系数在范围内− 40° c到125° c。 参考流程参数变异的电流易感性是± 3%。 电源抑制比在100Hz和10MHz处的任何滤波电容器低于− 127 dB和− 103 db。

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