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Design and Performance Analysis of Ultra-Low Voltage Rail-to-Rail Comparator in 130 nm CMOS Technology

机译:130 nm CMOS技术的超低电压轨到轨对比较器的设计与性能分析

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This paper addresses a design and performance evaluation of ultra low-voltage non-clocked voltage comparator. The circuit was designed in a standard twin-well 130 nm CMOS technology and is intended to work in temperature range of -20 - 85 °C with the power supply voltage of 0.6 V. The proposed comparator can handle the input voltage within the rail-to-rail range. Low-voltage design approaches, namely, gm/IDdesign methodology in combination with the bulk-driven operation approach have been employed. The measurements on fabricated prototype chips included evaluation of both static as well as dynamic parameters. An excellent correlation between simulations and the measured bench data was observed. The proposed comparator is currently being reviewed and re-designed for even lower power supply voltage of 0.4 V.
机译:本文地址超低电压非主频电压比较器的设计和性能评价。该电路的目的是在一个标准的双阱130纳米CMOS技术,旨在工作在-20温度范围 - 85℃下用0.6 V的的电源电压提出比较可以在rail-内处理所述输入电压到轨范围。低电压的设计方法,即,G m /一世 d 在与本体驱动操作的方式组合的设计方法已被使用。上制造的原型芯片的测量包括静态的评估,以及动态参数。观察到的模拟和测量工作台数据之间的良好的相关性。所提出的比较目前正在审查和重新设计的0.4 V的甚至更低的电源电压

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