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The Tandem-RFQ Linac Booster at Sandia National Laboratories

机译:桑迪亚国家实验室的Tandem-RFQ Linac Booster

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A booster linac based on the Radio Frequency Quadrupole (RFQ linac) has been put into routine operation on the 6.5 MV EN tandem accelerator at the Sandia National Laboratories (SNL) Ion Beam Materials Research Lab (IBMRL) for Radiation Effects Microscopy (REM) experiments with high energy, heavy ion beams. The booster linac consists of two RFQ stages that accelerate heavy ions with m/q < 8 from 0.25 MeV/amu up to 1.22 MeV/amu in the first stage and to 1.90 MeV/amu in the second stage to produce high Linear Energy Transfer (LET) ions for REM. This RFQ linac has a total length of 6.0 meters and is installed on a new experimental beam line at the SNL IBMRL to measure single-event upset (SEU) cross-sections of integrated circuits (ICs) and to perform radiation hardness research using REM with the associated Ion Electron Emission Microscope (IEEM). This paper presents the recent beam measurement results from operation of the RFQ linac with beams from silicon to gold and compares these results with theoretical beam dynamics calculations. It also describes the details of the experiments to measure SEU cross-sections and IEEM.
机译:基于射频四极(RFQ LINAC)的助推器LINAC已经在桑迪亚国家实验室(SNL)离子束材料研究实验室(IBMRL)的6.5 MV EN TANDEM加速器上进行了常规操作,用于辐射效应显微镜(REM)实验具有高能量,重离子束。 Booster Linac由两个RFQ阶段组成,可在第一阶段加速M / Q <8的重量离子,从0.25 meV / Amu,在第二阶段中的1.90 mev / Amu,以产生高线性能量转移(让)离子进行REM。该RFQ Linac的总长度为6.0米,并安装在SNL IBMRL的新实验梁线上,以测量集成电路(IC)的单事件镦粗(SEU)横截面,并使用REM执行辐射硬度研究相关的离子电子发射显微镜(IEEM)。本文介绍了近期光束测量结果,从硅与硅的RFQ LINAC的运行到金,并将这些结果与理论梁动力学计算进行比较。它还描述了测量SEU横截面和IEEM的实验的细节。

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