Simulation of facet heating in high power red lasers

摘要

A two-dimensional self-consistent laser model has been used for the simulation of the facet heating of red emitting AlGaInP lasers. It solves in the steady-state the complete semiconductor optoelectronic and thermal equations in the epitaxial and longitudinal directions and takes into account the population of different conduction band valleys. The model considers the possibility of two independent mechanisms contributing to the facet heating: recombination at surface traps and optical absorption at the facet. The simulation parameters have been calibrated by comparison with measurements of the temperature dependence of the threshold current and slope efficiency of broad-area lasers. Facet temperature has been measured by micro-Raman spectrometry in devices with standard and non absorbing mirrors evidencing an effective decrease of the facet heating due to the non absorbing mirrors. A good agreement between experimental values and calculations is obtained for both devices when a certain amount of surface traps and optical absorption is assumed. A simulation analysis of the effect of non absorbing mirrors in the reduction of facet heating in terms of temperature, carrier density, material gain and Shockly-Read-Hall recombination rate profiles is provided.