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Microstructure and texture of zinc deformed by extrusion with forward-backward rotating die (KoBo)

机译:通过向前向后旋转模具(Kobo)挤出变形锌的微观结构和纹理

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The KoBo device is a press with a cyclically rotating die enabling extrusion of ingots with the permanent destabilization of their substructure. The method involves a cyclic change of deformation path that increases the plasticity of the material and inhibits formation and propagation of cracks. The possibility of using KoBo for obtaining zinc wires with high mechanical properties was explored. A polycrystalline zinc ingot of purity of 99.995% was subjected to extrusion at room temperature. The microstructure of the material was investigated primarily via high-resolution electron backscatter diffraction using a scanning electron microscope. The microstructure is heterogeneous and consists of grains elongated slightly in the extrusion direction (ED). The material has a relatively sharp nearly axial texture with the ED scattered between the <10 - 10> and <2 - 1 - 10> directions. More than 95% of high-angle grain boundaries do not correspond to any twin or low Σ CSL boundaries. The dimensions of the grains range from 10 - 20 micrometers down to the sub-micron scale. Despite the relatively large grains, the final product exhibits very good mechanical properties, which could not be explained by the Hall - Petch relation. It was found that besides grain refinement two other effects could affect the material mechanical properties. These effects are formation of nanograms inside the large, micrometer-sized grains and formation of broad areas of high-density crystal lattice defects extended along the HAGBs.
机译:Kobo器件是一款带循环旋转模具的压机,使铸锭挤出具有永久性稳定化的原子结构。该方法涉及变形路径的​​循环变化,其增加了材料的可塑性并抑制裂缝的形成和传播。探讨了使用Kobo获得具有高机械性能的锌线的可能性。在室温下对纯度为99.995%的多晶锌锭进行挤出。主要通过使用扫描电子显微镜通过高分辨率电子反向散射衍射研究了材料的微观结构。微观结构是异质的,并且由挤压方向(ED)略微伸长的晶粒组成。该材料具有相对尖锐的几乎轴向纹理,该ED散射在<10-10和<2-10-10>方向之间。超过95%的高角度晶界不应对应于任何双胞胎或低ΣCSL边界。晶粒的尺寸范围为10-20微米到亚微米级。尽管谷物相对较大,最终产品表现出非常好的机械性能,这可能无法解释大厅 - 竖起关系。发现除了晶粒细化另外两种影响可能会影响材料机械性能。这些效果是在大,微米尺寸的晶粒内部形成纳米图,以及沿着Hagbs延伸的高密度晶格缺陷的宽面积的形成。

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