IN-SITU VAPOR PHASE PROCESSES IN AN INTEGRATED CLUSTER SYSTEM FOR PRE-GATE OXIDE SILICON SURFACE CLEANING

摘要

Vapor phase pre-gate oxide surface preparation was studied in a high vacuum cluster tool. Sacrificial or native oxide was etched with vapor Hydrofluoride and trace metallic and Hydrocarbon contamination were removed with a UV/Cl{sub}2 process. Surface residuals were analyzed with X-ray Photoluminescence Spectroscopy (XPS) and the surface morphology was investigated with Atomic Force Microscopy (AFM). Metal-Oxide-Semiconductor devices were fabricated on differently cleaned Si surfaces. The electrical properties of the SiO{sub}2/Si interface and the SiO{sub}2 integrity were characterized with Capacitance-Voltage (C-V) and Time-Dependent-Dielectric-Breakdown (TDDB) techniques.