Surface Complexation of Metals: A Predictive Model Based on Metal Coordination Chemistry

摘要

Various approaches to understanding and predicting adsorption metals onto oxidized silicon wafers have been put forward, with varying degrees of success, including ones based on electrochemical thermodynamics (ie Pourbaix diagrams) [1], solubility/precipitation [2], adsorption/desorption kinetics [3], and equilibrium thermodynamics [4]. This paper will explain the adsorption of metals at the silica surface in terms of the coordination chemistry of metal ions. A qualitative approach capable of predicting the robustness of chemical clean ups towards specific metals will be described. The conclusions based on this approach will be compared to original data as well as to data found in the literature.