CONSOLIDATING VIA CLEANING PROCESSES IN A MANUFACTURING LINE WHICH UTILIZES 3 DIFFERENT TYPES OF SPIN-ON-DIELECTRICS

摘要

This paper evaluates the complexity of different device technologies in a manufacturing line that utilizes 3 separate spin-on dielectric (SOD) materials for planarization requirements, namely 1) Silicate SOG; 2) Siloxane SOG; and 3) HSQ low-k material. The study shows the effect of the different SOD materials on post-etch residue formation; investigates multiple cleaning combinations and their effects on residue removal; and compares via resistance and device yield as a result of the different cleaning treatments. The data shows that manufacturing cleaning processes across all device technologies can be consolidated from 3 separate processes into 1 process. This optimized cleaning process also resulted in via resistance being reduced by as much as 14%, and overall yield increases on some devices by as much as 2%. This consolidation allowed for equipment and process backup, which did not exist prior to this work. As well, reduction in volumes of chemicals used of 7% was achieved, resulting in a reduction of chemical costs of 26%.