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A Study on the Characteristics of a Wafer Final Polishing process at Various Machining and Temperature Variation

机译:各种加工和温度变化下晶片最终抛光过程特性的研究

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摘要

The polishing is one of the important methods in manufacturing of silicon wafer and in thinning of completed device wafer. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, down-force, slurry ratio are investigated, time is used as a fixed factor. This study will report the evaluation on surface of wafer by dependent of varying platen, chuck rpm, temperature variation, and oscillation which affect it has on the surface roughness. In this experiment, it is determined the optimum condition for polishing silicon wafers. By using optimum condition, it helps to achieve an ultra precision mirror like surface.
机译:抛光是制造硅晶片的重要方法之一,以及完成的装置晶片的变薄。通常,获得诸如镜子的平坦表面是该过程的目的。晶片表面粗糙度受许多变量的影响,例如载体头部单元的特性,操作,速度,垫和浆料温度。对实验温度,下降力,浆料比的最佳过程条件进行了研究,时间用作固定因子。本研究将通过取决于不同的压板,卡盘RPM,温度变化和影响其对表面粗糙度的振荡来报告晶片表面的评估。在该实验中,确定抛光硅晶片的最佳条件。通过使用最佳条件,它有助于实现诸如表面上的超精密镜。

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